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Ge and 84 Se

A. Gade,1,2 T. Baugher,1,2 D. Bazin,1 B. A. Brown,1,2 C. M. Campbell,1 T. Glasmacher,1,2 G. F. Grinyer,1 M. Honma,3 S. McDaniel,1,2 R. Meharchand,1,2 T. Otsuka,4,5 A. Ratkiewicz,1,2 J. A. Tostevin,6 K. A. Walsh,1,2 and D. Weisshaar1 1National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, Michigan 48824, USA 2Department of Physics and Astronomy, Michigan State Un...

Short range order in Ge - As - Se glasses

The structure of GexAs10Se90-x (x=10, 17.5, 22.5, 27.5, 30, 35) glasses as well as some other compositions extensively used in infrared optics, e.g. GASIR® (Ge22As20Se58) and AMTIR-1 (Ge33As12Se55) has been investigated by X-ray diffraction (XRD) and extended X-ray absorption fine structure (EXAFS) measurements at the Ge, As and Se K-edges. Structural models have been obtained by fitting simult...

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se₃)100-xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have m...

Probing Cu doped Ge 0.3 Se 0.7 based resistance switching memory devices with random telegraph noise

Modified Gibbs-DiMarzio equation applied to the Ge-Se-Fe and Ge-Se-In chalcogenide glasses

The glass transition is a complex, non-equilibrium physical phenomenon and despite the numerous efforts expended in the last three decades, the mechanisms governing the glass transition continue to raise a lot of fundamental questions. Its study is of extreme importance from both academic and technological points of view. Several theoretical models have been developed to improve our understandi...